feb.1999 mitsubishi transistor modules QM300HA-24B high power switching use insulated type QM300HA-24B outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders 108 93 0.25 7.5 916 16 25 29 18.5 3 14 10 16 8 14 10 9 9 bx ec be 7 62 48 0.25 4?6.5 7 41 35 +1 0.5 24.5 +1 0.5 b c e bx e 4 f 6.5 3?4 2?6 label ? i c collector current ........................ 300a ? v cex collector-emitter voltage ......... 1200v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 mitsubishi transistor modules QM300HA-24B high power switching use insulated type absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 1200 1200 1200 7 300 300 1980 16 3000 C40~+150 C40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 470 unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1200v, v eb =2v v cb =1200v,emitter open v eb =7v, collector open i c =300a, i b =400ma i c =C300a (diode forward voltage) i c =300a, v ce =4.0v v cc =600v, i c =300a, i b1 =600ma, Ci b2 =6.0a transistor part diode part conductive grease applied typ. max. 4.0 4.0 200 4.0 4.0 1.8 2.5 15 3.0 0.063 0.3 0.04
feb.1999 2 10 1 10 0 10 ? 10 ? 10 ? 10 1 10 0 10 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.8 3.2 3.6 4.0 4.4 4.8 v ce =4.0v t j =25? 4 10 7 5 4 3 2 3 10 7 5 4 3 2 2 10 1 10 23457 2 10 23457 3 10 v ce =4v t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 1 10 23457 2 10 23457 3 10 v ce(sat) v be(sat) t j =25? t j =125? i b =400ma 500 400 300 200 100 0 012345 t j =25? i b =400ma i b =100ma i b =200ma i b =50ma 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 i c =100a t j =25? t j =125? i c =300a i c =200a 7 5 3 2 7 5 3 2 7 5 3 2 1 10 23457 2 10 23457 3 10 t j =25? t j =125? ? b2 =6.0a v cc =600v i b1 =0.6a t f t on t s performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM300HA-24B high power switching use insulated type
feb.1999 1 10 0 10 ? 10 ? 10 ? 10 0 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 ? 10 0 10 2 10 1 10 600 0 0 200 1200 300 1000 500 400 200 100 t j =125? i b2 =?a 400 600 800 7 5 3 2 7 5 3 2 7 5 3 2 0 10 23457 1 10 23457 2 10 t j =25? t j =125? v cc =600v i c =300a t s i b1 =0.6a t f 3 10 2 10 7 5 4 3 2 1 10 7 5 4 3 2 2.2 0.6 1.0 1.4 1.8 t j =25? t j =125? 0.2 7 5 3 2 7 5 3 2 7 5 3 2 0.08 0.06 0.05 0.02 0 23 57 0.03 0.07 0.01 0.04 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 second breakdown area collector dissipation 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 100 s dc 1m s 200 s 50 s non?epetitive switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM300HA-24B high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 1 10 0 10 0 10 ? 10 ? 10 ? 10 ? 10 1 10 0 10 3 10 7 5 4 3 2 2 10 7 5 4 3 2 1 10 1 10 23457 2 10 23457 3 10 v cc =600v i b1 =0.6a t j =25? t j =125? i rr t rr q rr ? b2 =6.0a 7 5 4 3 2 7 5 4 3 2 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 3200 2400 800 1600 400 1200 2000 2800 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0.32 0.24 0.16 0.08 0 23 57 23 5 7 i rr (a), q rr ( m c) surge collector surge current Ci csm (a) t rr ( m s) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) z th (jCc) ( c/ w) mitsubishi transistor modules QM300HA-24B high power switching use insulated type
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